SiC substrate
Kev piav qhia
Silicon carbide (SiC) yog binary compound ntawm pab pawg IV-IV, nws tsuas yog cov khoom ruaj khov nyob hauv Pawg IV ntawm Lub Sij Hawm Lub Sij Hawm, Nws yog ib qho tseem ceeb ntawm cov khoom siv hluav taws xob.SiC muaj cov khoom siv thermal, mechanical, tshuaj thiab hluav taws xob zoo, uas ua rau nws yog ib qho ntawm cov khoom siv zoo tshaj plaws rau kev ua kom kub, siab zaus, thiab cov khoom siv hluav taws xob muaj zog, SiC kuj tuaj yeem siv los ua cov khoom siv substrate. rau GaN-raws li xiav lub teeb-emitting diodes.Tam sim no, 4H-SiC yog cov khoom lag luam tseem ceeb hauv kev ua lag luam, thiab cov khoom siv hluav taws xob tau muab faib ua semi-insulating hom thiab N hom.
Cov khoom
| Yam khoom | 2 nti 4H N-hom | ||
| Txoj kab uas hla | 2 nti (50.8mm) | ||
| Thickness | 350 +/- 25 hli | ||
| Kev taw qhia | Tawm axis 4.0˚ mus rau <1120> ± 0.5˚ | ||
| Thawj Txoj Kev Ncaj Ncees | <1-100> ± 5° | ||
| Secondary Flat Kev taw qhia | 90.0˚ CW los ntawm Primary Flat ± 5.0˚, Si Face up | ||
| Qhov Loj Loj Loj | 16 ± 2.0 | ||
| Secondary Flat Length | 8 ± 2.0 | ||
| Qib | Qib ntau lawm (P) | Kev tshawb fawb qib (R) | Qib Dummy (D) |
| Kev tiv thaiv | 0.015 ~ 0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Micropipe ntom ntom | ≤ 1 micropipes / cm² | ≤ 10 micropipes / cm² | ≤ 30 micropipes / cm² |
| Nto Roughness | Si lub ntsej muag CMP Ra <0.5nm, C ntsej muag Ra <1 nm | N / A, thaj chaw siv tau> 75% | |
| TTV | <8 awm | <10 ua | < 15 awm |
| Hneev | < ± 8 awm | < ± 10 hli | < ± 15 hli |
| Warp | < 15 awm | < 20 awm | < 25 awm |
| Kev tawg | Tsis muaj | Kev sib sau ntev ≤ 3 mm | Qhov ntev ≤10mm, |
| Kos | ≤ 3 khawb, cumulative | ≤ 5 khawb, cumulative | ≤ 10 khawb, cumulative |
| Hex daim hlau | siab tshaj 6 daim hlau, | siab tshaj 12 daim hlau, | N / A, thaj chaw siv tau> 75% |
| Polytype Areas | Tsis muaj | Qhov ntau thiab tsawg ≤ 5% | Qhov ntau thiab tsawg ≤ 10% |
| Kev kis kab mob | Tsis muaj | ||
